BYS1290 vishay telefunken 1 (4) rev. 3, 08-sep-00 www.vishay.com document number 86015 schottky barrier rectifier features high efficiency low power losses very low switching losses low reverse current high surge capability applications polarity protection low voltage, high frequency rectifiers 15 811 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit reverse voltage= repetitive peak reverse voltage v r = v rrm 90 v peak forward surge current t p =10ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j =t stg 55...+150 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction lead t l =constant r thjl 25 mounted on epoxyglass hard tissue 150 k/w junction ambient mounted on epoxyglass hard tissue, 50mm 2 35 m cu r thja 125 k/w mounted on aloxidceramic (al 2 o 3 ), 50mm 2 35 m cu thja 100 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =1a v 750 mv forward voltage i f =15ma v f 360 mv reverse current v r =v rrm i r 100 a reverse current v r =v rrm , t j =100 c i r 1 ma
BYS1290 vishay telefunken 2 (4) rev. 3, 08-sep-00 www.vishay.com document number 86015 characteristics (t j = 25 c unless otherwise specified) i forward current ( a) 0.001 0.010 0.100 1.000 10.000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 16471 f t j =25 c t j = 150 c figure 1. forward current vs. forward voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 t amb ambient temperature ( c ) 16472 i average forward current ( a ) fav v r =v rrm half sinewave r thja 25k/w figure 2. max. average forward current vs. ambient temperature 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 95 9723 40 80 120 160 200 v r = 0 v, half sinewave 100k/w 125k/w 150k/w r thja =25k/w figure 3. max. average forward current vs. ambient temperature 100 1000 10000 100000 25 50 75 100 125 150 t j junction temperature ( c ) 16473 v r = v rrm i reverse current ( a ) r figure 4. reverse current vs. junction temperature 0 500 1000 1500 2000 2500 25 50 75 100 125 150 t j junction temperature ( c ) 16474 v r = v rrm p reverse power dissipation ( mw ) r p r limit @100%v r figure 5. max. reverse power dissipation vs. junction temperature 0 20 40 60 80 100 120 140 160 180 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 16475 c diode capacitance ( pf ) d f=1mhz figure 6. diode capacitance vs. reverse voltage
BYS1290 vishay telefunken 3 (4) rev. 3, 08-sep-00 www.vishay.com document number 86015 dimensions in mm 14275
BYS1290 vishay telefunken 4 (4) rev. 3, 08-sep-00 www.vishay.com document number 86015 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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